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 SHINDENGEN
VX-2 Series Power MOSFET
N-Channel Enhancement type
2SK2192
(F12W50VX2)
500V 12A
FEATURES
Input capacitance (Ciss) is small.
OUTLINE DIMENSIONS
Case :: MTO-3P Case E-pack (Unit : mm)
Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. APPLICATION
Switching power supply of AC 100V input High voltage power supply Inverter
RATINGS
Absolute Maximum Ratings Tc = 25 Item Symbol Conditions Tstg Storage Temperature Tch Channel Temperature VDSS Drain-Source Voltage Gate-Source Voltage VGSS ID Continuous Drain CurrentDC IDP Continuous Drain CurrentPeak) IS Continuous Source CurrentDC Total Power Dissipation PT IAS Single Pulse Avalanche Current Tch = 25 Recommended torque : 0.5Nm Mounting Torque Ratings -55150 150 500 30 12 36 12 80 12 0.8 Unit V
A W A Nm
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
VX-2 Series Power MOSFET
Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Forward Tranconductance gfs Static Drain-Source On-tate Resistance RDS(ON) Gate Threshold Voltage VTH VSD Source-Drain Diode Forwade Voltage jc Themal Resistance Qg Total Gate Charge Ciss Input Capacitance Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton toff Turn-Off Time Conditions
2SK2192 ( F12W50VX2 )
Min. 500 Typ. Max. 250 0.1 3.0 2.5 7.6 0.55 3.0 Unit V A
ID = 1mA, VGS = 0V VDS = 500V, VGS = 0V VGS = 30V, VDS = 0V ID = 6A, VDS = 10V ID = 6A, VGS = 10V ID = 1mA, VDS = 10V IS = 6A, VGS = 0V junction to case VDD = 400V, VGS = 10V, ID = 12A VDS = 10V, VGS = 0V, f = 1MHZ ID = 6A, VGS = 10V, RL = 25
42 1200 90 270 90 190
S 0.7 3.5 V 1.5 1.56 / nC pF 130 280 ns
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SK2192
25 Tc = -55C
Transfer Characteristics
25C
20
Drain Current ID [A]
100C 15 150C
10
5 VDS = 25V pulse test TYP 0 5 10 15 20
0
Gate-Source Voltage VGS [V]
2SK2192
Static Drain-Source On-state Resistance
Static Drain-Source On-state Resistance RDS(ON) []
1 ID = 6A
0.1
VGS = 10V pulse test TYP -50 0 50 100 150
Case Temperature Tc [C]
2SK2192
5
Gate Threshold Voltage
Gate Threshold Voltage VTH [V]
4
3
2
1 VDS = 10V ID = 1mA TYP -50 0 50 100 150
0
Case Temperature Tc [C]
2SK2192
100
Safe Operating Area
10
Drain Current ID [A]
100s R DS(ON) limit 1 1ms 200s
10ms DC 0.1
Tc = 25C Single Pulse 0.01 1 10 100 1000
Drain-Source Voltage VDS [V]
2SK2192
Transient Thermal Impedance
100
10
1
Transient Thermal Impedance jc(t) [C/W]
0.1
0.01 10-5 10-3
10-4
10-2
10-1
100
101
102
Time t [s]
2SK2192
Capacitance
Ciss 1000
Capacitance Ciss Coss Crss [pF]
Coss 100
Crss
Tc=25C TYP 10 0 20 40 60 80 100
Drain-Source Voltage VDS [V]
2SK2192
100
Power Derating
80
Power Derating [%]
60
40
20
0
0
50
100
150
Case Temperature Tc [C]
2SK2192
500
Gate Charge Characteristics
20
Drain-Source Voltage VDS [V]
15 VDD = 400V 200V 300 100V 10 VDS 200 VGS
5 100
ID = 12A 0 0 20 40 60 80 0 100
Gate Charge Qg [nC]
Gate-Source Voltage VGS [V]
400


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